HN2D01FU TOSHIBA Semiconductor CORPORATION, HN2D01FU Datasheet - Page 2

• Manufacturer Part Number: HN2D01FU
• Description: Toshiba Diode Silicon Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Fig.1 Reverse Recovery Time
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Characteristic
(Q1 Q2 Q3 Common, Ta
Symbol
V
V
V
I
I
R (1)
R (2)
(t
F (1)
F (2)
F (3)
C
t rr
T
rr
)
Test Circuit
Circuit
Test
―
―
―
―
―
―
―
I
I
I
V
V
V
I
F
F
F
F
R
R
R
= 1mA
= 10mA
= 100mA
= 10mA (Fig.1)
= 30V
= 80V
= 0, f = 1MH
=
Test Condition
25° ° ° ° C)
z
Min
―
―
―
―
―
―
―
2001-02-08 2/3
Typ.
0.62
0.75
0.98
0.5
1.6
―
―
HN2D01FU
Max
1.20
0.1
0.5
3.0
4.0
―
―
Unit
µ
pF
ns
V
A