BUK127-50DL NXP Semiconductors, BUK127-50DL Datasheet - Page 5

• Manufacturer Part Number: BUK127-50DL
• Description: Buk127-50dl Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 2001
PowerMOS transistor
Logic level TOPFET
1.5
0.5
2.0
1.0
0.5
2
0
1
1.5
Fig.4. Typical on-state characteristics, T
0
ID / A
0
0
Fig.2. Normalised limiting power dissipation.
ID / A
120
110
100
90
80
70
60
50
40
30
20
10
0
I
4
0
D
PD%
20
Fig.3. Continuous drain current.
= f(V
P
I
D
D
% = 100 P
20
= f(T
8
DS
40
); parameter V
amb
40
TYP.
12
); condition: V
60
D
60
Tamb / C
/P
VDS / V
Tmb / C
16
D
(25˚C) = f(T
CURRENT LIMITING OCCURS
80
80
Normalised Power Derating
WITHIN SHADED REGION
IS
20
; t
100
IS
p
100
= 300 s
= 5 V
VIS / V =
120
24
mb
120
)
BUK127-50DL
j
BUK127-50DL
= 25˚C.
140
28
140
7
6
5
4
32
5
a = R
1.5
0.5
0.5
1.5
Fig.5. Normalised drain-source on-state resistance.
0
2
1
0
2
1
R
-50
Fig.7. Typical transfer characteristics, T
0
a
ID / A
DS(ON)
350
300
250
200
150
100
Fig.6. Typical on-state resistance, T
50
I
0
D
DS(ON)
0
RDS(ON) / mOhm
= f(V
= f(V
1
/R
1
IS
DS(ON)
); conditions: V
IS
); conditions: I
0
2
2
25˚C = f(T
3
3
VIS / V
VIS / V
Tj /
50
j
); I
4
DS
MAX.
D
C
= 100 mA, t
= 10 V, t
D
4
= 100 mA; V
5
BUK127-50DL
Product specification
Normalised RDS(ON) = f(Tj)
TYP.
5
6
100
p
BUK127-50DL
= 300 s
j
= 25˚C.
p
j
= 300 s
BUK127-50DL
= 25˚C.
7
Rev 1.011
IS
6
= 4.4 V
8
150
7