BSN205 NXP Semiconductors, BSN205 Datasheet - Page 2

• Manufacturer Part Number: BSN205
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
variant envelope. Designed primarily
as a line current interrupter in
telephone sets, it can also be applied
in other applications such as in relays,
line and high speed transformer
drivers etc.
FEATURES
PIN CONFIGURATION
April 1995
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown
Low R
N-channel enhancement mode vertical
D-MOS transistor
Note: various pinout configurations available.
DS(on)
handbook, halfpage
1
2
QUICK REFERENCE DATA
PINNING - TO-92 VARIANT
3
Fig.1 Simplified outline and symbol.
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to
Drain-source ON-resistance
Transfer admittance
1
2
3
T
I
I
D
D
amb
= gate
= drain
= source
= 400 mA; V
= 400 mA; V
BSN205
= 25 C
GS
DS
2
= 25 V
= 10 V
MAM148
g
d
s
V
I
P
R
1
2
3
D
DS
tot
Y
DS(on)
V
fs
GSO
BSN205A
= source
= gate
= drain
BSN205; BSN205A
Product specification
max.
max.
max.
max.
typ.
max.
min.
typ.
200 V
300 mA
200
350
4.5
20 V
1 W
6
mS
mS