BSN205 NXP Semiconductors, BSN205 Datasheet - Page 3

• Manufacturer Part Number: BSN205
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead
CHARACTERISTICS
T
April 1995
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Drain-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate threshold voltage
Drain-source ON-resistance
Transfer admittance
Input capacitance at f = 1 MHz
j
= 25 C unless otherwise specified
N-channel enhancement mode vertical
D-MOS transistor
I
V
V
I
I
I
V
D
D
D
D
min. 10 mm
DS
GS
DS
= 10 A; V
= 1 mA; V
= 400 mA; V
= 400 mA; V
= 160 V; V
= 20 V; V
= 25 V; V
DS
GS
GS
DS
GS
GS
DS
10 mm.
= V
= 0
= 0
= 0
= 25 V
= 0
= 10 V
GS
amb
= 25 C (note 1)
3
V
I
I
V
R
| Y
C
DSS
GSS
(BR) DSS
GS(th)
DS(on)
iss
R
V
I
I
P
T
T
D
DM
fs
stg
j
th j-a
DS
tot
V
|
GSO
BSN205; BSN205A
min.
max.
max.
min.
max.
typ.
max.
min.
typ.
typ.
max.
max.
max.
max.
max.
max.
max.
=
Product specification
65 to
200 V
100 nA
200
350
125 K/W
0.8
2.8
200 V
300 mA
150
150
45
60
1.2 A
20 V
1
4
6
1 W
V
V
mS
mS
pF
pF
A
C
C