RJK5003DPD Renesas Electronics Corporation., RJK5003DPD Datasheet

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RJK5003DPD

Manufacturer Part Number
RJK5003DPD
Description
Silicon N Channel Power Mos Fet High Speed Power Switching Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RJK5003DPD-01-J2
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
RJK5003DPD
Silicon N Channel Power MOS FET
High Speed Power Switching Use
Features
Outline
Applications
Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain Peak current
Avalanche current
Channel dissipation
Channel temperature
Storage temperature
Channel to case thermal impedance
Note:
Rev.2.00,
V
R
I
Surface mount package (MP-3A)
Lighting ballast, SMPS, etc.
D
DS(on)
DSS
: 5 A
1. Pulse width limited by safe operating area.
: 500 V
: 1.5
Mar 14, 2006,
Parameter
(MAX.)
RENESAS Package code: PRSS0004ZA-A
(Package name : MP-3A)
page 1 of 6
I
D (pulse)
Symbol
V
V
Tstg
Pch
Tch
I
DSS
GSS
I
ch-c
AP
D
Note1
1
2
4
3
–55 to +150
Ratings
62.5
500
150
2.0
20
1
30
5
5
2, 4
3
Unit
C/W
W
V
V
A
A
A
C
C
1. Gate
2. Drain
3. Source
4. Drain
V
V
L = 200 H
Channel to case
GS
DS
= 0 V
= 0 V
REJ03G0580-0200
Conditions
Mar 14, 2006
(Tc = 25°C)
Rev.2.00

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RJK5003DPD Summary of contents

Page 1

... RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use Features V : 500 V DSS R : 1.5 (MAX.) DS(on Surface mount package (MP-3A) Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) Applications Lighting ballast, SMPS, etc. Maximum Ratings Parameter Drain to source voltage Gate to source voltage ...

Page 2

... RJK5003DPD Electrical Characteristics Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... RJK5003DPD Performance Curves Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics 25°C Pulse Test 62 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage (Typical ...

Page 4

... RJK5003DPD Transfer Characteristics (Typical 25° Pulse Test Gate to Source Voltage V Switching Characteristics (Typical d(on Drain Current I Reverse Drain Current vs. Source to Drain Voltage Characteristics (Typical ...

Page 5

... RJK5003DPD Static Drain to Source on State Resistance vs. Channel Temperature (Typical Pulse Test –1 10 –75 –25 25 Channel Temperature Tch (°C) Transient Thermal Impedance vs. Pulse Width 0 0.2 7 0.1 5 0.05 3 0.02 0.01 2 Single pulse – ...

Page 6

... Note the case of a standard. In addition, please confirm the packing specification for every product about the contents of packing. Rev.2.00, Mar 14, 2006, page Previous Code MASS[Typ.]  0.32g 2.3 6.6 0.5 ± 0.2 5.3 ± 0.2 0.1 ± 0.1 0.76 0.5 ± 0.2 2.3 ± 0.2 Quantity Standard order code 3000 Type name - 00 - direction ( Unit: mm Standard order code example RJK5003DPD-00-J2 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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