RJK5003DPD Renesas Electronics Corporation., RJK5003DPD Datasheet - Page 2

• Manufacturer Part Number: RJK5003DPD
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching Use
• Manufacturer: Renesas Electronics Corporation.

RJK5003DPD
Electrical Characteristics
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Note:
Rev.2.00,
2. Pulse test
Mar 14, 2006,
Parameter
page 2 of 6
Symbol
V
V
R
Coss
(BR)DSS
Crss
Ciss
t
t
I
I
V
GS(off)
DS(on)
d(on)
d(off)
DSS
GSS
t
t
DF
r
f
Min.
500
3.0
—
—
—
—
—
—
—
—
—
—
—
Typ.
550
3.5
1.3
1.0
60
10
20
20
60
25
—
—
—
Max.
4.0
1.5
1.5
—
—
—
—
—
—
—
—
0.1
1
Unit
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
A
I
V
V
I
I
V
f = 1 MHz
V
V
R
I
D
D
D
F
DS
GS
DS
DD
GS
G
= 2 A, V
= 2 A, V
= 1 mA, V
= 1 mA, V
= 25
= 500 V, V
= 25 V, V
= 25 V, V
= 10 V
= 200 V, I
Test conditions
GS
GS
GS
DS
= 10 V
= 0 V
GS
D
GS
= 10 V
= 0 V
DS
= 0 V,
= 2 A,
(Tch = 25°C)
= 0 V
= 0 V
Note2
Note2