RJK5003DPD Renesas Electronics Corporation., RJK5003DPD Datasheet - Page 3

• Manufacturer Part Number: RJK5003DPD
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching Use
• Manufacturer: Renesas Electronics Corporation.

RJK5003DPD
Performance Curves
Rev.2.00,
Mar 14, 2006,
20
16
12
70
60
50
40
30
20
10
10
0
8
4
8
6
4
2
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage V
Tc = 25°C
Pulse Test
Gate to Source Voltage V
P
Gate to Source Voltage (Typical)
Power vs. Temperature Derating
DS
Typical Output Characteristics
Case Temperature Tc (°C)
= 62.5 W
4
4
50
page 3 of 6
8
8
10 V
V
100
GS
= 20 V
12
12
Tc = 25°C
Pulse Test
6 V
150
I
D
16
16
GS
DS
= 8 A
4V
5 A
7 V
3 A
5 V
(V)
(V)
200
20
20
Static Drain to Source on State Resistance vs.
0.01
3.2
2.4
1.6
0.8
100
0.1
10
4
5
4
3
2
1
0
0
10
1
0
1
–1
Drain to Source Voltage V
Drain to Source Voltage V
Operation in this area is
limited by R
Tc = 25°C
Single pulse
Maximum Safe Operating Area
Typical Output Characteristics
Drain Current (Typical)
Drain Current I
2
V
GS
10 V
10
10
DS(on)
= 20 V
V
0
GS
4
= 10 V
6 V
6
100
10
7 V
D
20 V
Tc = 25°C
Pulse Test
1
Tc = 25°C
Pulse Test
(A)
DS
8
DS
4 V
(V)
(V)
5 V
1000
10
10
2