RJK5003DPD Renesas Electronics Corporation., RJK5003DPD Datasheet - Page 5

• Manufacturer Part Number: RJK5003DPD
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching Use
• Manufacturer: Renesas Electronics Corporation.

RJK5003DPD
Rev.2.00,
Static Drain to Source on State Resistance vs.
10
10
10
10
10
10
Mar 14, 2006,
7
5
3
2
7
5
3
2
–1
–1
10
7
5
4
3
2
7
5
4
3
2
–75
1
0
1
0
Switching Time Measurement Circuit
–4
D = 1
0.5
0.1
0.2
V
I
Pulse Test
Single pulse
D
Channel Temperature Tch (°C)
Vin Monitor
R
Channel Temperature (Typical)
GS
Transient Thermal Impedance vs. Pulse Width
2 3 57
= 2 A
G
0.01
= 10 V
0.02
–25
0.05
10
–3
25
2 3 5 7
page 5 of 6
Pulse Width PW (s)
D.U.T.
10
75
–2
2 3 5 7
P
DM
125
R
V
L
DD
10
Vout
Monitor
–1
175
2 3 5 7
PW
T
10
0
D =
2 3 5 7
PW
T
10
1
t d(on)
5.0
4.0
3.0
2.0
1.0
Vout
Vin
0
–75
Gate to Source Cutoff Voltage vs.
Channel Temperature Tch (°C)
Channel Temperature (Typical)
–25
10%
10%
Switching Waveform
90%
t r
25
t d(off)
75
90%
V
I
D
DS
125
= 1 mA
= 10 V
90%
10%
175
t f