PH8230 NXP Semiconductors, PH8230 Datasheet
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PH8230
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PH8230 Summary of contents
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... N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 23 June 2003 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH8230 in SOT669 (LFPAK). 1.2 Features Low thermal resistance Low gate drive current 1.3 Applications DC-to-DC converters Portable appliances 1.4 Quick reference data ...
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... N-channel enhancement mode field-effect transistor Conditions 150 pulsed pulsed Rev. 01 — 23 June 2003 PH8230 Min Max Unit - 120 +150 C 55 +150 C ...
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... ------------------- der I Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 23 June 2003 PH8230 03am20 60 120 180 100 03am21 100 100 (V) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 11118 Product data N-channel enhancement mode field-effect transistor Conditions Rev. 01 — 23 June 2003 PH8230 Min Typ Max Unit - - 2.5 K/W 03am22 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... MHz / Rev. 01 — 23 June 2003 PH8230 Min Typ Max Unit 1. 6.3 8 10.5 15.3 27 ...
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... V 0.6 4 -100 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 23 June 2003 PH8230 03am24 ° 150 C ° 1 ( DSon 03am26 0 100 ...
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... C oss C rss ( and 150 Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Rev. 01 — 23 June 2003 PH8230 03am28 min typ max (V) 03am30 150 0.5 1 ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 11118 Product data N-channel enhancement mode field-effect transistor ( (nC) Rev. 01 — 23 June 2003 PH8230 03am31 30 © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... D 1 (1) ( max 4.41 0.25 0.30 4.10 5.0 3.3 4.20 3.62 0.19 0.24 3.80 4.8 3.1 REFERENCES JEDEC JEITA MO-235 Rev. 01 — 23 June 2003 PH8230 detail ( 6.2 0.85 1.3 1.3 1.27 0.25 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE PROJECTION 02-07-10 03-02-05 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Philips Semiconductors 7. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030623 - Product data (9397 750 11118) 9397 750 11118 Product data N-channel enhancement mode field-effect transistor Rev. 01 — 23 June 2003 PH8230 © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Rev. 01 — 23 June 2003 Rev. 01 — 23 June 2003 PH8230 PH8230 Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2003 Document order number: 9397 750 11118 N-channel enhancement mode field-effect transistor PH8230 ...