PH8230 NXP Semiconductors, PH8230 Datasheet - Page 2

• Manufacturer Part Number: PH8230
• Description: Ph8230 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 11118
Product data
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
DS
GS
tot
stg
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Limiting values
Conditions
T
T
T
T
j
mb
mb
mb
mb
mb
= 25 to 150 C
Rev. 01 — 23 June 2003
= 25 C; V
= 25 C; pulsed; t
= 25 C
= 25 C
= 25 C; pulsed; t
N-channel enhancement mode field-effect transistor
GS
= 10 V
p
p
10 s
10 s
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
-
-
-
-
-
-
-
55
55
PH8230
Max
30
30
120
50
+150
+150
30
120
20
2 of 12
Unit
V
V
A
A
W
A
A
C
C