PH8230 NXP Semiconductors, PH8230 Datasheet - Page 6

• Manufacturer Part Number: PH8230
• Description: Ph8230 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 11118
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
(m )
100
j
j
(A)
I D
= 25 C
50
40
30
20
10
= 25 C
75
50
25
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
V GS = 10 V
3 V
20
2
4.5 V
3.5 V
4 V
3.5 V
3 V
40
4
V DS (V)
I D (A)
4.5 V
10 V
03am23
03am25
4 V
60
6
Rev. 01 — 23 June 2003
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
1.8
1.2
0.6
(A)
= 25 C and 150 C; V
80
60
40
20
=
I D
a
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-100
---------------------------- -
R
0
DSon 25 C
R
DSon
1.5
150
0
°
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
C
I
D
x R
100
3
DSon
25
°
C
V GS (V)
T j ( C)
PH8230
03am26
03am24
200
4.5
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