PHB160N03T NXP Semiconductors, PHB160N03T Datasheet
PHB160N03T
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PHB160N03T Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: PHB160N03T in SOT404 (D 2. Features TrenchMOS™ technology Very low on-state resistance. 3. Applications converters Switched-mode power supplies General purpose switch ...
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... 0.1 ms starting unclamped inductive load starting Rev. 01 — 13 September 2000 PHB160N03T Typ Max Unit 230 W 175 C 4 Min Max Unit ...
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... der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 13 September 2000 PHB160N03T 03ad31 120 100 100 125 150 175 ...
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... Product specification N-channel enhancement mode field-effect transistor Conditions Figure 4 Mounted on a printed circuit board; minimum footprint 1 = 0.5 0.2 -1 0.1 0.05 0.02 single pulse - pulse duration. Rev. 01 — 13 September 2000 PHB160N03T Value Unit 0.65 K/W 50 K/W 03ad20 (s) © ...
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... Figure /dt = 100 Rev. 01 — 13 September 2000 PHB160N03T Typ Max Unit 4 500 A 2 100 125 nC ...
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... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ad21 100 I D (A) Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 13 September 2000 PHB160N03T 03ad23 V DS > DSon 175 ...
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... C iss , C oss C rss (nF) 80 100 MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 13 September 2000 PHB160N03T 03aa35 min typ max ...
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... Product specification N-channel enhancement mode field-effect transistor 03ad30 ( 0 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 13 September 2000 PHB160N03T 03ad29 15V ...
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... N-channel enhancement mode field-effect transistor 2 scale max. 1.60 10.30 2.90 15.40 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 13 September 2000 PHB160N03T 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 © Philips Electronics N.V. 2000. All rights reserved. SOT404 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000913 - Product specification 9397 750 07325 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 PHB160N03T © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 13 September 2000 PHB160N03T Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 13 September 2000 PHB160N03T © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 September 2000 Document order number: 9397 750 07325 N-channel enhancement mode field-effect transistor Printed in The Netherlands PHB160N03T ...