PHB160N03T NXP Semiconductors, PHB160N03T Datasheet - Page 7

• Manufacturer Part Number: PHB160N03T
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07325
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
90
80
70
60
50
40
30
20
10
0
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
0
-60
DS
DS
= V
I
D
-20
20
GS
R
DSon
20
40
60
60
max.
typ.
min
100
80
T j ( o C)
140
I D (A)
03ad24
03aa32
Rev. 01 — 13 September 2000
100
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
C iss , C oss
= 25 C; V
gate-source voltage.
as a function of drain-source voltage; typical
values.
C rss
(nF)
= 0 V; f = 1 MHz
(A)
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
10
9
8
7
6
5
4
3
2
1
0
0
DS
10 -2
= 5 V
1
10 -1
2
PHB160N03T
min
© Philips Electronics N.V. 2000. All rights reserved.
1
3
typ
V GS (V)
10
V DS (V)
4
max
03aa35
Ciss
03ad25
Coss
Crss
5
10 2
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