PHB64N03LT NXP Semiconductors, PHB64N03LT Datasheet

no-image

PHB64N03LT

Manufacturer Part Number
PHB64N03LT
Description
Phb64n03lt Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
[1]
Pin Description
1
2
3
mb
It is not possible to make a connection to pin 2 of the SOT404 package.
gate (g)
drain (d)
source (s)
mounting base,
connected to drain (d)
Pinning - SOT404 simplified outline and symbol
M3D166
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
[1]
PHB64N03LT in a SOT404 (D
PHB64N03LT
TrenchMOS™ logic level FET
Rev. 01 — 27 August 2002
Low on-state resistance
Fast switching.
Computer motherboard high frequency DC to DC converters.
Simplified outline
1
SOT404 (D
mb
2
2
-
PAK).
3
2
-PAK)
MBK116
Symbol
MBB076
Product data
g
d
s

Related parts for PHB64N03LT

PHB64N03LT Summary of contents

Page 1

... TrenchMOS™ logic level FET Rev. 01 — 27 August 2002 M3D166 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB64N03LT in a SOT404 (D 2. Features Low on-state resistance Fast switching. 3. Applications Computer motherboard high frequency converters. 4. Pinning information Table 1: Pinning - SOT404 simplifi ...

Page 2

... 5V; starting unclamped inductive load starting Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET Typ Max Unit - 175 C 10 Min ...

Page 3

... ------------------ - der I Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET 03aa24 50 100 150 200 100 03aj20 100 ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 10026 Product data Conditions Figure 4 minimum footprint; mounted on a PCB Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET Min Typ Max Unit - - 1.75 K K/W 03ae63 ...

Page 5

... MHz; Figure Figure Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET Min Typ Max Unit ...

Page 6

... --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET 03ae67 V DS > DSon 175 (V) > ...

Page 7

... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET 03aa36 min typ max ( 03ae70 C iss C oss C rss 10 2 © ...

Page 8

... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET 03ae71 (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 99-06-25 01-02-12 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. SOT404 ...

Page 10

... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020827 - Product data; initial version. 9397 750 10026 Product data Rev. 01 — 27 August 2002 PHB64N03LT TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 11

... Rev. 01 — 27 August 2002 Rev. 01 — 27 August 2002 PHB64N03LT PHB64N03LT TrenchMOS™ logic level FET TrenchMOS™ logic level FET performance. Philips Semiconductors ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 August 2002 Document order number: 9397 750 10026 PHB64N03LT TrenchMOS™ logic level FET ...

Related keywords