PHB64N03LT NXP Semiconductors, PHB64N03LT Datasheet - Page 8
PHB64N03LT
Manufacturer Part Number
PHB64N03LT
Description
Phb64n03lt Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.PHB64N03LT.pdf
(12 pages)
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Philips Semiconductors
9397 750 10026
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
= 25 C and 175 C; V
60
40
20
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
175 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03ae69
1.2
Rev. 01 — 27 August 2002
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
10
= 55 A; V
8
6
4
2
0
charge; typical values.
0
I D = 55 A
T j = 25 C
V DD = 15 V
DD
= 15 V
10
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
20
PHB64N03LT
30
Q G (nC)
03ae71
40
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