PHB78NQ03LT NXP Semiconductors, PHB78NQ03LT Datasheet - Page 6

• Manufacturer Part Number: PHB78NQ03LT
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 15071
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
80
60
40
20
80
60
40
20
0
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
j
0
j
= 25 C
= 25 C and 175 C; V
V
GS
(V) =
0.2
2
0.4
DS
25 C
0.6
> I
10
D
4
8
R
DSon
T
V
0.8
j
GS
= 175 C
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003aaa762
6
V
(V)
DS
4.5
3.6
3.2
2.8
2.4
(V)
5
4
1
6
Rev. 05 — 13 June 2005
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
1.5
0.5
30
20
10
2
1
0
0
T
of drain current; typical values
-60
factor as a function of junction temperature
a
0
j
= 25 C
V
=
GS
---------------------------- -
R
(V) =
DSon 25 C
R
N-channel TrenchMOS logic level FET
DSon
20
0
PHB78NQ03LT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
3.6
40
60
4
120
60
4.5
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03af18
T
I
D
j
( C)
(A)
10
5
6
8
180
80
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