PHB78NQ03LT NXP Semiconductors, PHB78NQ03LT Datasheet - Page 7

• Manufacturer Part Number: PHB78NQ03LT
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 15071
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
V
GS(th)
(V)
(V)
GS
2.5
1.5
0.5
10
2
1
0
8
6
4
2
0
I
junction temperature
I
charge; typical values
-60
D
D
0
= 1 mA; V
= 25 A; V
I
T
D
j
= 25 A
= 25 C
DS
0
DS
12 V
= 12 V and 19 V
= V
10
GS
60
max
typ
min
V
DD
= 19 V
20
120
Q
G
T
003aaa763
03aa33
(nC)
j
( C)
180
30
Rev. 05 — 13 June 2005
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
10
I
10
10
10
10
10
D
-1
-2
-3
-4
-5
-6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
DS
GS1
= 5 V
1
I
Q
min
D
GS
Q
PHB78NQ03LT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
GS2
Q
typ
G(tot)
Q
GD
2
max
V
GS
003aaa508
03aa36
(V)
3
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