PHB95NQ04LT NXP Semiconductors, PHB95NQ04LT Datasheet - Page 3

• Manufacturer Part Number: PHB95NQ04LT
• Description: Phb95nq04lt N-channel Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13166
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
(A)
10 3
10 2
mb
P
(%)
I D
120
der
10
der
80
40
1
function of mounting base temperature.
0
= 25 C; I
0
1
=
---------------------- -
P
tot 25 C
Limit R DSon = V DS / I D
P
tot
DM
50
is single pulse; V
100%
100
GS
= 10 V
150
T
03aa16
mb
( C)
200
DC
Rev. 01 — 11 May 2004
10
Fig 2. Normalized continuous drain current as a
I
120
I der
(%)
der
80
40
0
function of mounting base temperature.
0
=
-------------------
I
D 25 C
N-channel TrenchMOS™ logic level FET
I
D
50
100%
PHB95NQ04LT
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
100 µs
100 ms
t p = 10 s
1 ms
10 ms
150
T mb ( C)
03aq83
03aq81
10 2
200
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