PHB95NQ04LT NXP Semiconductors, PHB95NQ04LT Datasheet - Page 6

• Manufacturer Part Number: PHB95NQ04LT
• Description: Phb95nq04lt N-channel Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13166
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
240
160
= 25 C
15
10
= 25 C
80
5
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
1
80
10 V
2
6 V
V GS = 4.6 V
160
V GS = 2.6 V
3
I D (A)
V DS (V)
03aq84
03aq85
5 V
4.6 V
4.2 V
3.8 V
3.4 V
10 V
5 V
3 V
6 V
240
4
Rev. 01 — 11 May 2004
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
I D
a
= 25 C and
1.5
0.5
=
80
60
40
20
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
2
1
0
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
N-channel TrenchMOS™ logic level FET
DSon
175
1
0
T j = 175 C
C; V
PHB95NQ04LT
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
2
I
D
x R
25 C
DSon
120
3
03aa27
V GS (V)
T
j
03aq86
( C)
180
4
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