PHB10N40 NXP Semiconductors, PHB10N40 Datasheet - Page 2

• Manufacturer Part Number: PHB10N40
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
April 1997
PowerMOS transistor
j
SYMBOL PARAMETER
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
L
L
C
C
C
j
SYMBOL PARAMETER
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
fs
d
d
s
V
T
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
g(tot)
gs
gd
rr
j
(BR)DSS
/ Drain-source breakdown
Drain-source breakdown
voltage
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
V
V
V
V
V
V
V
V
I
V
R
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
V
CONDITIONS
T
T
I
I
dI/dt = 100 A/ s
D
S
S
mb
mb
GS
DS
GS
DS
DS
DS
DS
GS
DD
GS
G
= 10 A; V
= 10 A; V
= 10 A; V
= 9.1 ; R
= 25˚C
= 25˚C
= V
= V
= 30 V; I
= 400 V; V
= 320 V; V
= 0 V; I
= 10 V; I
= 30 V; V
= 200 V; I
= 0 V; V
GS
GS
; I
; I
2
D
D
D
DD
GS
GS
DS
D
D
= 0.25 mA
= 0.25 mA
= 0.25 mA
D
= 320 V; V
D
= 6 A
= 6 A
= 0 V
= 0 V;
GS
GS
DS
= 25 V; f = 1 MHz
= 20
= 10 A;
= 0 V
= 0 V; T
= 0 V
GS
j
= 125 ˚C
= 10 V
MIN.
MIN.
400
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
1080
TYP.
0.42
108
190
110
330
0.4
3.0
6.0
3.5
4.5
7.5
4.8
30
10
90
49
13
65
70
1
7
-
-
-
-
Product specification
PHB10N40
MAX.
MAX.
0.55
10.6
250
200
110
4.0
1.2
25
60
43
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
V/K
nC
nC
nC
nH
nH
nH
nA
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
A
A
V
A
A
C