PHB10N40 NXP Semiconductors, PHB10N40 Datasheet - Page 4

• Manufacturer Part Number: PHB10N40
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
April 1997
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
40
30
20
10
10
0
8
6
4
2
0
2
1
0
0
0
VDS = 30 V
ID, Drain current (Amps)
gfs, Transconductance (S)
-60 -40
VDS = 30 V
Fig.7. Typical transfer characteristics.
a
DS(ON)
Fig.8. Typical transconductance .
/R
-20
2
VGS, Gate-Source voltage (Volts)
I
D
g
DS(ON)25 ˚C
10
fs
= f(V
= f(I
0
ID, Drain current (A)
GS
20
D
4
); parameter T
); parameter T
= f(T
Tj / C
40
20
150 C
j
Normalised RDS(ON) = f(Tj)
); I
60
6
D
= 6 A; V
80
100 120 140
30
j
j
8
PHP10N40
Tj = 150 C
PHP10N40
Tj = 25 C
GS
Tj = 25 C
= 10 V
10
40
4
V
10000
GS(TO)
1000
Fig.12. Typical capacitances, C
100
C = f(V
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
4
3
2
1
0
D
10
-60
= f(V
1
VGS(TO) / V
Junction capacitances (pF)
Fig.11. Sub-threshold drain current.
= f(T
0
ID / A
-40
Fig.10. Gate threshold voltage .
GS)
DS
j
); conditions: I
); conditions: V
-20
; conditions: T
VDS, Drain-Source voltage (Volts)
1
0
10
20
2 %
max.
typ.
min.
Tj / C
40
SUB-THRESHOLD CONDUCTION
2
VGS / V
D
j
GS
= 25 ˚C; V
60
= 0.25 mA; V
= 0 V; f = 1 MHz
typ
Coss
80
Ciss
Crss
100
Product specification
3
100 120 140
iss
PHB10N40
, C
98 %
DS
PHP10N40
oss
= V
DS
4
, C
Rev 1.000
= V
GS
rss
1000
.
GS