TK60A08J1 TOSHIBA Semiconductor CORPORATION, TK60A08J1 Datasheet - Page 3

• Manufacturer Part Number: TK60A08J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
100
200
160
120
10
80
60
40
20
80
40
1
0
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Common source
Tc = 25°C
Pulse Test
0.2
Drain-source voltage V DS
Gate-source voltage V GS
1
Drain current I D (A)
1
25
0.4
2
Tc = −55°C
I
I
|Y
D
D
8
fs
– V
– V
25
| – I
10
DS
GS
100
0.6
D
3
100
5
10
Tc = −55°C
4.5
0.8
(V)
(V)
4
3.75
3.25
3.5
4
3
100
1.0
5
3
200
160
120
100
0.8
0.6
0.4
0.2
80
40
10
1
0
0
1
0
0
1
Common source
Tc = 25°C
Pulse Test
8
10
Drain-source voltage V DS
Gate-source voltage V GS
2
4
4.5
5
Drain current I D (A)
10
R
V
4
8
DS (ON)
I
DS
D
– V
4.25
– V
V GS = 4.5 V
DS
GS
– I
12
6
I D = 60 A
100
D
Common source
Tc = 25°C
Pulse Test
Common source
Tc = 25°C
Pulse Test
30
15
10
16
8
(V)
(V)
TK60A08J1
3.75
2007-02-05
3.25
3.5
4
3
1000
20
10