TK60A08J1 TOSHIBA Semiconductor CORPORATION, TK60A08J1 Datasheet - Page 4

• Manufacturer Part Number: TK60A08J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
20
16
12
80
60
40
20
8
4
0
−80
0
0.1
0
Common source
Pulse Test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
V GS = 4.5V
−40
40
Drain-source voltage V DS (V)
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
1
R
DS (ON)
80
V GS = 10V
P
D
40
− Tc
− Tc
120
10
80
DS
160
120
I D = 60 A
C oss
C iss
C rss
30
15
60
30
15
200
160
100
4
1000
300
100
100
30
10
−80
5
4
3
2
1
0
80
60
40
3
1
20
0
0
.
0
Common source
I D = 60 A
Ta = 25°C
Pulse Test
Common source
Tc = 25°C
Pulse Test
V DS
10
−40
0.4
1
Drain-source voltage V DS (V)
Case temperature Tc (°C)
20
Total gate charge Q g (nC)
5
3
Dynamic input / output
V DD = 15V
0
0
0.8
characteristics
I
V
40
DR
th
40
− V
− Tc
DS
1.2
V GS
60
80
30V
Common source
V DS = 10 V
Pulse Test
I D = 1mA
1.6
60V
120
80
TK60A08J1
2007-02-05
160
2.0
100
16
20
12
8
4
0