TK20A60U TOSHIBA Semiconductor CORPORATION, TK20A60U Datasheet - Page 2

• Manufacturer Part Number: TK20A60U
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Dtmos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K20A60U
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
(Note 1)
(Note 1)
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
V
V
I
V
V
V
V
V
D
Duty ≤ 1%, t
GS
DS
DS
GS
DS
DS
DD
V
= 10 mA, V
GS
I
I
dI
DR
DR
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V, V
10 V
= ±30 V, V
= 10 V, I
≈ 400 V, V
DR
0 V
2
= 20 A, V
= 20 A, V
(Ta = 25°C)
/dt = 100 A/μs
50 Ω
Test Condition
D
D
D
w
GS
GS
Test Condition
GS
= 1 mA
= 10 A
DS
= 10 A
GS
= 10 μs
GS
= 0 V
GS
= 0 V, f = 1 MHz
= 0 V
= 0 V
I
= 10 V, I
D
⎯
⎯
= 0 V
= 0 V,
= 10 A
V
DD
D
= 20 A
R
≈ 300 V
V
30 Ω
L
OUT
=
600
Min
Min
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
0.165
1470
3500
Typ.
Typ.
150
100
450
8.1
12
40
80
12
27
16
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TK20A60U
2008-08-28
0.19
−1.7
Max
Max
100
5.0
±1
⎯
⎯
⎯
⎯
⎯
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
S
A
A
V