TK20A60U TOSHIBA Semiconductor CORPORATION, TK20A60U Datasheet - Page 4

• Manufacturer Part Number: TK20A60U
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Dtmos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100000
10000
1000
100
0.5
0.4
0.3
0.2
0.1
50
40
30
20
10
10
−80
0
0
1
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Drain−source voltage V
−40
Case temperature Tc (°C)
Case temperature Tc (°C)
40
1
0
R
DS (ON)
C – V
P
D
40
80
− Tc
DS
– Tc
10
I D = 20 A
80
10
DS
120
C rss
C iss
C oss
5
120
(V)
C iss
C rss
C oss
160
160
100
4
100
500
400
300
200
100
0.1
10
5
4
3
2
1
0
−80
0
1
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
V DS
Common source
Tc = 25°C
Pulse test
Drain−source voltage V
−40
5
Total gate charge Q
Case temperature Tc (°C)
0.4
10
Dynamic input/output
3
10
0
characteristics
1
I
DR
V
V GS = 0 V
th
V DD = 100V
V GS
0.8
− V
40
20
− Tc
DS
200V
80
g
DS
Common source
I D = 20 A
Tc = 25°C
Pulse test
1.2
(nC)
30
(V)
120
400V
TK20A60U
2008-08-28
1.6
160
40
20
16
12
8
4
0