HN1C03F TOSHIBA Semiconductor CORPORATION, HN1C03F Datasheet - Page 2

• Manufacturer Part Number: HN1C03F
• Description: Npn Epitaxial Type For Muting And Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Base-emitter voltage
Transition frequency
Collector output
capacitance
Switching
time
Note: h
Characteristic
A: 200~700, B: 350~1200
FE
Turn-on time
Storage Time
Fall time
Classification
h
V
Symbol
FE (Note)
CE (sat)
I
I
V
C
CBO
EBO
―
―
―
f
BE
T
ob
(Ta = 25° ° ° ° C) (Q1,Q2 Common)
Circuit
Test
―
―
―
―
―
―
―
―
―
―
V
V
V
I
V
V
V
C
CB
EB
CE
CE
CE
CB
Equivalent Circuit
= 30mA, I
= 50V, I
= 25V, I
= 2V, I
= 2V, I
= 6V, I
= 10V, I
C
C
C
B
C
E
E
= 4mA
= 4mA
= 4mA
2
= 3mA
= 0
= 0
= 0, f = 1MHz
Test Condition
(Top View
)
200
Min
―
―
―
―
―
―
―
―
―
0.042
Typ.
0.61
160
500
130
4.8
30
―
―
―
HN1C03F
2001-06-05
1200
Max
0.1
0.1
0.1
―
―
―
―
―
7
MHz
Unit
µA
µA
pF
ns
V
V