HN1K06FU TOSHIBA Semiconductor CORPORATION, HN1K06FU Datasheet

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HN1K06FU

Manufacturer Part Number
HN1K06FU
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
HN1K06FU
Quantity:
3 000
High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings
(Q1, Q2 common)
High input impedance and extremely low drive current.
V
: V
Switching speed is fast.
Suitable for high-density mounting because of a compact package
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: TOTAL rating
th
th
is low and it is possible to drive directly at low-voltage CMOS.
= 0.5 to 1.5 V
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(Ta = 25°C)
P
Symbol
HN1K06FU
D
V
V
T
T
GSS
I
(Note 1)
DS
stg
D
ch
−55 to 150
Rating
100
200
150
20
10
1
Unit
mW
mA
°C
°C
V
V
Weight: 6.8 mg
JEDEC
JEITA
TOSHIBA
HN1K06FU
2-2J1C
2007-11-01
Unit: mm

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HN1K06FU Summary of contents

Page 1

... Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: TOTAL rating HN1K06FU (Ta = 25°C) Symbol Rating Unit GSS I 100 (Note 1) 200 150 °C ch −55 to 150 T °C stg 1 HN1K06FU Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg 2007-11-01 ...

Page 2

... Marking ( D.U. < < Ω) (Z out (c) V OUT Common Source 25° HN1K06FU Min Typ. Max = 0 V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 1 ⎯ 3.5 6.0 ⎯ 14 ⎯ 5.3 ⎯ 16 ⎯ 0.28 ⎯ ...

Page 3

... DS 100 0.1 0.01 −1.4 −1.6 −1.8 0 (V) DS 100 0.5 0.1 100 300 (mA) 3 HN1K06FU I – V (low voltage region Common source Ta = 25°C 2.5 1.2 1.15 1 1.05 V 1.0 0.95 0.1 0.2 0.3 0.4 Drain-source voltage V ( – Common source Ta = 100° −25°C 25°C ...

Page 4

... Ambient temperature Ta (°C) *: TOTAL rating 1000 500 300 100 50 2 100 300 1 (mA) 120 140 160 4 HN1K06FU t – off OUT D.U. < < out = 50 Ω) 10 μ Common source 25°C ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 HN1K06FU 20070701-EN GENERAL 2007-11-01 ...

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