HN1K06FU TOSHIBA Semiconductor CORPORATION, HN1K06FU Datasheet - Page 3

• Manufacturer Part Number: HN1K06FU
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(Q1, Q2 common)
0.01
100
100
300
100
0.1
80
60
40
20
10
30
10
0
1
3
1
0
0
Common source
V DS = 3 V
Ta = 25°C
2.5
−0.2
1
Drain-source voltage V
Drain-source voltage V
−0.4
2
Drain current I
2.0
3
−0.6
1.9
5
I
4
⎪Y
−0.8
DR
I
D
10
fs
– V
1.8
– V
⎪ – I
−1.0
DS
DS
1.7
D
D
6
G
Common source
V GS = 0
Ta = 25°C
−1.2
30 50
Ta = 25°C
Common source
(mA)
V GS = 1.6 V
DS
DS
−1.4
8
D
S
1.4
(V)
(V)
100
−1.6
1.2
I
DR
10
−1.8
300
3
0.01
100
100
1.0
0.4
0.8
0.6
0.2
0.1
0.5
10
30
10
0
1
1
0.1
3
0
0
Ta = 100°C
2.5
C oss
C iss
C rss
Drain-source voltage V
Gate-source voltage V
1
Drain-source voltage V
0.1
0.3
1.2
0.5
25°C
I
−25°C
D
2
– V
1.15
0.2
1
I
C – V
D
DS
– V
3
Common source Ta = 25°C
DS
GS
(low voltage region)
0.3
3
Common source
V DS = 3 V
V GS = 1.05 V
4
1.0
DS
GS
Common source
V GS = 0
f = 1 MHz
Ta = 25°C
5
DS
1.1
0.4
(V)
10
(V)
(V)
HN1K06FU
5
2007-11-01
0.95
0.5
30
6