2PD2150 NXP Semiconductors, 2PD2150 Datasheet
2PD2150
Related parts for 2PD2150
2PD2150 Summary of contents
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... NPN low V Rev. 02 — 2 January 2007 1. Product profile 1.1 General description NPN low V SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...
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... T amb junction temperature ambient temperature storage temperature O , standard footprint Rev. 02 — 2 January 2007 2PD2150 NPN low V CEsat Simplified outline Symbol Marking code M2 Min - - - - - ...
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... O , standard footprint 2 3 Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient O , standard footprint Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat 006aaa943 75 125 175 amb Min Typ Max [ 250 [2] - ...
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... Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2PD2150_2 Product data sheet Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat 006aaa944 (s) p 006aaa945 ...
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... 100 MHz common-base input capacitance MHz common-base output capacitance MHz 300 s; 0.02. p Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat Min Typ = 0.1 A 180 - C [ ...
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... 100 C amb = 25 C amb = 40 C amb current; typical values 2PD2150 (BISS) transistor 006aaa957 0.8 1.0 V (V) CE 006aaa959 (mA) C © NXP B.V. 2007. All rights reserved ...
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... T (MHz (mA amb Fig 11. Transition frequency as a function of emitter current; typical values Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat 006aaa961 (1) (2) ( (mA 100 006aaa963 ...
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... Fig 13. Common-base output capacitance as a Rev. 02 — 2 January 2007 NPN low V CEsat MHz amb E e function of collector-base voltage; typical values 2PD2150 (BISS) transistor 006aaa965 (V) CB © NXP B.V. 2007. All rights reserved ...
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... For further information and the availability of packing methods, see 2PD2150_2 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Description SOT89 8 mm pitch tape and reel Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 06-08-29 [1] Packing quantity 1000 -115 Section 13. © ...
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... NPN low V CEsat 1.70 4.85 Dimensions in mm 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) 3.50 solder lands 7.60 0.50 1.20 solder resist occupied area 3.00 Dimensions in mm preferred transport direction during soldering 2PD2150 (BISS) transistor solder lands solder resist occupied area solder paste msa423 © NXP B.V. 2007. All rights reserved ...
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... Product data sheet Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat Change notice Supersedes - 2PD2150_1 thermal resistance from junction to ambient for - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 2 January 2007 2PD2150 NPN low V (BISS) transistor CEsat © NXP B.V. 2007. All rights reserved ...
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... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2PD2150 (BISS) transistor CEsat All rights reserved. Date of release: 2 January 2007 Document identifier: 2PD2150_2 ...