2PD2150 NXP Semiconductors, 2PD2150 Datasheet - Page 6

• Manufacturer Part Number: 2PD2150
• Description: 20 V, 3 A Npn Low Vcesat Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2PD2150_2
Product data sheet
Fig 4. Collector current as a function of base-emitter
Fig 6. Collector current as a function of
(mA)
(1) T
(2) T
(3) T
(A)
I
I
C
C
10
10
10
10
1
5
4
3
2
1
0
4
3
2
V
voltage; typical values
T
collector-emitter voltage; typical values
0
0
amb
amb
amb
amb
CE
50
45
40
35
= 2 V
= 100 C
= 25 C
= 40 C
= 25 C
0.2
1
0.4
I
B
(mA) = 5
2
0.6
(1)
30
25
20
15
10
(2)
0.8
3
(3)
1.0
4
006aaa956
006aaa958
1.2
V
V
CE
BE
(V)
(V)
1.4
Rev. 02 — 2 January 2007
5
Fig 5. Collector current as a function of
Fig 7. DC current gain as a function of collector
(1) T
(2) T
(3) T
h
(A)
I
FE
C
10
10
2.0
1.6
1.2
0.8
0.4
10
0
1
3
2
T
collector-emitter voltage; typical values
V
current; typical values
0
1
amb
amb
amb
amb
CE
I
B
20 V, 3 A NPN low V
= 2 V
(mA) = 20
= 25 C
= 100 C
= 25 C
= 40 C
(1) (2) (3)
18
16
14
12
0.2
10
0.4
10
10
2
0.6
CEsat
10
8
6
4
2
2PD2150
© NXP B.V. 2007. All rights reserved.
3
0.8
(BISS) transistor
I
006aaa957
006aaa959
C
V
CE
(mA)
(V)
10
1.0
4
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