BUJ101AU NXP Semiconductors, BUJ101AU Datasheet - Page 4

• Manufacturer Part Number: BUJ101AU
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
September 1999
Silicon Diffused Power Transistor
V
CC
tfi (ns)
275
250
225
200
175
150
125
100
Fig.7. Collector-Emitter saturation voltage.
-VBB
VCEsat VOLTAGE/V
1.5
0.5
75
50
25
IBon
0
2
1
0
0.01
2
= 300 V; -V
Fig.9. Test circuit inductive load.
Solid Lines = typ values, I
Fig.11. Inductive switching.
4
BE
IC, COLLECTOR CURRENT/A
= 5 V, L
IC/IB = 3
tfi = f(h
LB
HFE GAIN (IC/IB)
0.1
6
C
FE
= 200 H; L
)
LC
8
25 C
C
/I
IC = 2A
VCC
B
125 C
IC = 1A
= 3
INDUCTIVE SWITCHING
-40 C
B
IC = 1.5A
1
T.U.T.
10
= 1 H
2
11
4
Fig.10. Switching times waveforms with inductive load.
tfi (ns)
IB
275
250
225
200
175
150
125
100
IC
VBEsat VOLTAGE/V
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
75
50
25
0
0.8
1
0.01
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I
25 C
1
Fig.12. Inductive switching.
IC/IB = 5
1.2
IC/IB =3
IC, COLLECTOR CURRENT/A
IC/IB = 3
IC COLLECTOR CURRENT /A
tfi = f(I
ts
1.4
toff
0.1
IBon
-40 C
C
1.6
)
125 C
Product specification
tf
1.8
C
90 %
/I
ICon
B
-IBoff
10 %
IC/IB = 10
= 3
BUJ101AU
2
1
Rev 1.000
t
t
2
2.2