BUJ101AU NXP Semiconductors, BUJ101AU Datasheet - Page 5

• Manufacturer Part Number: BUJ101AU
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
September 1999
Silicon Diffused Power Transistor
R
Fig.15. Test circuit resistive load. V
B
and R
tsi (us)
ton (us)
1.25
0.75
0.25
VIM
0
0.5
1.5
0.5
1
0
2
1
0
V
2
0
CC
L
= 250 V; t
T
calculated from I
tp
Fig.17. Resistive switching.
Fig.13. Inductive switching.
IC = 2A
IC = 1A
0.5
4
IC = 1.5A
IC COLLECTOR CURRENT (A)
p
tsi = f(h
= 20 s; = t
ton = f(I
R
HFE GAIN (IC/IB)
B
IC/IB = 3
IC/IB = 10
6
1
Con
FE
IC/IB = 5
C
)
and I
)
1.5
8
p
R
VCC
Bon
/ T = 0.01.
T.U.T.
L
IM
requirements.
= -6 to +8 V
RESISTIVE SWITCHING
10
2
11
5
Fig.16. Switching times waveforms with resistive load.
tsi (us)
IB
2.5
1.5
0.5
IC
1.25
0.75
0.25
ts (us)
0.5
3
2
1
0
1
0
0
0.8
1
Fig.14. Inductive switching.
Fig.18. Resistive switching.
IC/IB = 10
0.5
IC/IB = 3
10 %
tr
ton
1.2
30ns
IC COLLECTOR CURRENT (A)
90 %
IC COLLECTOR CURRENT /A
IC/IB = 5
tsi = f(I
ts = f(I
1
-IBoff
1.4
C
C
1.6
)
)
1.5
IC/IB = 3
ts
toff
Product specification
1.8
IBon
2
BUJ101AU
IC/IB = 5
IC/IB = 10
ICon
tf
2
90 %
10 %
Rev 1.000
2.2
2.5