PHE13005X NXP Semiconductors, PHE13005X Datasheet
PHE13005X
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PHE13005X Summary of contents
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... PHE13005X Silicon diffused power transistor Rev. 01 — 15 May 2008 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a full pack plastic package. 1.2 Features I Low thermal resistance I Isolated package 1.3 Applications I Electronic lighting ballasts I Inverters 1.4 Quick reference data ...
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... P der (%) With heatsink compound P tot P = ----------------------- - 100 % der P tot 25 C Normalized total power dissipation as a function of heatsink temperature Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor Min - - - - - - - Figure 03aa13 100 150 200 © NXP B.V. 2008. All rights reserved. ...
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... Transient thermal impedance from junction to heatsink as a function of pulse duration Conditions from all three terminals to external heatsink Hz; sinusoidal waveform; relative humidity 65 %; clean and dust free from pin 2 to external heatsink MHz Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor Min Typ - - - 55 001aag169 t ...
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... 250 V; see Figure 5 and 6 CC Inductive load Con 0.4 A; see Figure 7 BE Bon I = 0.4 A Bon 100 C Bon j Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor Min Typ Max [ [ [ [ 0 400 - - - 0 ...
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... Fig DUT 001aai069 = and I requirements. Con Bon Fig 6. Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor Oscilloscope display for collector-emitter sustaining voltage test waveform off Boff Switching times definitions for resistive load ...
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... Fig 8. 001aai070 V CEsat ( (A) C Fig 10. Collector-emitter saturation voltage; typical Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor Con off Bon I Boff Switching times definitions for inductive load 2 ...
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... V CEsat ( (A) C Fig 12. Collector-emitter saturation voltage ( CL(CE) probe point DUT 001aab999 = Fig 14. Reverse bias safe operating area Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor 0.5 0.4 0.3 0.2 0 function of collector current; typical values 8 C ...
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... Fig 15. Forward bias safe operating area 8. Package information Epoxy meets requirements of UL94 V-0 at 3.175 mm. PHE13005X_1 Product data sheet duty cycle = 0.01 (1) ( force on the center of the envelope. Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor 001aai071 ( 100 s 200 s (2) ...
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... scale 2.7 0.7 15.8 6.5 10.3 5.08 2.54 1.7 0.4 15.2 6.3 9.7 REFERENCES JEDEC JEITA 3-lead TO-220F Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor mounting base ( max. 0.6 14.4 3.30 2.6 3.2 3 0.4 13.5 2.79 2.3 3.0 EUROPEAN PROJECTION SOT186A ( ...
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... NXP Semiconductors 10. Revision history Table 7. Revision history Document ID Release date PHE13005X_1 20080515 PHE13005X_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 15 May 2008 PHE13005X Silicon diffused power transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 May 2008 Document identifier: PHE13005X_1 ...