PHE13005X NXP Semiconductors, PHE13005X Datasheet - Page 6

• Manufacturer Part Number: PHE13005X
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHE13005X_1
Product data sheet
Fig 7.
Fig 9.
h
FE
10
10
1
2
10
V
Test circuit for inductive load switching
T
DC current gain as a function of collector
current; typical values
CC
j
I
V
2
Bon
= 25
BB
= 300 V; V
C
10
BB
1
= 5 V; L
L
B
C
V
= 200 H; L
CE
1
= 5 V
1 V
L
I
001aab991
C
C
V
001aai070
(A)
CC
DUT
B
= 1 H
10
Rev. 01 — 15 May 2008
Fig 8.
Fig 10. Collector-emitter saturation voltage; typical
V
CEsat
(V)
2.0
1.6
1.2
0.8
0.4
I
I
C
B
0
10
Switching times definitions for inductive load
T
values
j
2
= 25
I
C
= 1 A
C
10
Silicon diffused power transistor
2 A 3 A
1
t
I
t
off
Bon
s
4 A
PHE13005X
1
I
t
90 %
10 %
Con
f
I
Boff
© NXP B.V. 2008. All rights reserved.
I
B
001aab995
(A)
001aab992
10
t
t
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