TPD4111K TOSHIBA Semiconductor CORPORATION, TPD4111K Datasheet - Page 11

• Manufacturer Part Number: TPD4111K
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Description of Protection Function
Over-current setting value
(1)
(2)
(3)
PWM reference voltage
by forcing the motor to turn externally and creating an edge at a Hall sensor output. In order to
ensure reboot after a system lock, the motor specification must be such that maximum duty is less
than 100%.
Over-current protection
The IC incorporates an over-current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current-detection
resistor connected to the IS1/IS2 pin. When this voltage exceeds V
output, which is on, temporarily shuts down after a mask period, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
Under-voltage protection
The IC incorporates an under-voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V
When the V
shut down regardless of the input. This protection function has hysteresis. When the V
V typ.) reaches 0.5 V higher than the shutdown voltage, the IC is automatically restored and the
IGBT is turned on/off again by the input.
When the V
When the V
turned on/off again by the input signal.
Thermal shutdown
The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal
heat generation , all IGBT outputs shut down regardless of the input. This protection function has
hysteresis (ΔTSD = 50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is
automatically restored and the IGBT is turned on/off again by the input.
Because the chip contains just one temperature-detection location, when the chip heats up due to the
IGBT for example, the distance between the detection location and the IGBT (the source of the heat)
can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip
may rise higher than the initial thermal shutdown temperature.
Output current
Triangle wave
CC
BS
BS
UVR (= 10.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
supply voltage drops (V
power supply falls to the IC internal setting (V
t
OFF
Over-current shutdown
Duty OFF
CC
voltage or the V
t
ON
BS
UVD = 10 V typ.), the high-side IGBT output shuts down.
Duty ON
11
Mask period + t
BS
voltage drops.
OFF
CC
UVD = 11 V typ.), all IGBT outputs
R
= 0.5 V (typ.), the high-side IGBT
t
ON
Retry
TPD4111K
CC
2006-06-30
UVR (= 11.5