TSM9N50 Taiwan Semiconductor Company, Ltd. (TSC), TSM9N50 Datasheet

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TSM9N50

Manufacturer Part Number
TSM9N50
Description
500v N-channel Power Mosfet
Manufacturer
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet
Absolute Maximum Rating
Thermal Performance
Notes: Surface mounted on FR4 board t ≤ 10sec
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current*
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Total Power Dissipation @Tc = 25
Operating Junction Temperature
Storage Temperature Range
General Description
The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Ordering Information
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
TSM9N50CZ C0
TSM9N50CI C0
Low R
Low gate charge typical @ 63nC (Typ.)
Low Crss typical @ 120pF (Typ.)
Fast Switching
TO-220
Part No.
DS(ON)
0.85Ω @ V
Package
ITO-220
ITO-220
TO-220
GS
= 10V
o
(Ta = 25
C
Pin Definition:
1. Gate
2. Drain
3. Source
50pcs / Tube
50pcs / Tube
o
C unless otherwise noted)
Packing
Ta = 25ºC
Ta = 100ºC
Preliminary
1/7
PRODUCT SUMMARY
500V N-Channel Power MOSFET
V
Symbol
Symbol
DS
500
P
T
V
V
E
E
I
I
DTOT
T
I
DM
STG
AR
JC
(V)
DS
GS
AS
AR
D
J
JA
N-Channel MOSFET
0.85 @ V
Block Diagram
R
-55 to +150
DS(on)
Limit
Limit
62.5
500
±30
510
125
150
5.1
3.1
36
13
9
8
GS
(Ω)
=10V
TSM9N50
Version: Preliminary
I
D
4.8
o
o
Unit
Unit
(A)
C/W
C/W
mJ
mJ
ºC
o
W
V
V
A
A
A
A
C

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TSM9N50 Summary of contents

Page 1

... ITO-220 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge ...

Page 2

... 400V 9A 10V 25V 0V 1.0MHz V = 250V 9A 9.1Ω /dt = 100A/us F =9.1Ω, Starting T =25º 2/7 TSM9N50 Min Typ Max BV 500 -- -- DSS -- 0.75 0.85 DS(ON) 2.0 -- 4.0 GS(TH DSS ±100 GSS ...

Page 3

... Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E Test Circuit & Waveform AS Preliminary 500V N-Channel Power MOSFET 3/7 TSM9N50 Version: Preliminary ...

Page 4

... Diode Reverse Recovery Time Test Circuit & Waveform Preliminary 500V N-Channel Power MOSFET 4/7 TSM9N50 Version: Preliminary ...

Page 5

... Preliminary 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM 5/7 TSM9N50 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN 10.000 10.500 0.394 3.740 3.910 0.147 2.440 2.940 0.096 - 6.350 - 0.381 1.106 0.015 2.345 2.715 0.092 4.690 5 ...

Page 6

... Preliminary 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM 6/7 TSM9N50 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN 10.04 10.07 0.395 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.52 0.54 0.020 2.35 2.73 0.093 13.50 13.55 0.531 1.11 1.49 0.044 2 ...

Page 7

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Preliminary 500V N-Channel Power MOSFET Notice 7/7 TSM9N50 Version: Preliminary ...

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