MT4S100T TOSHIBA Semiconductor CORPORATION, MT4S100T Datasheet - Page 2

• Manufacturer Part Number: MT4S100T
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution:
Transition Frequency
Insertion Gain
Noise Figure
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transfer Capacitance
This device is sensitive to electrostatic discharge due to applied the high frequency transistor
process of fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
Characteristics
Characteristics
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
|S21e|
I
I
hFE
C
CBO
EBO
C
NF
f
T
ob
re
2
V
V
V
V
V
V
V
V
CE
CE
CE
CB
EB
CE
CB
CB
2
=2V, I
=2V, I
=2V, I
=6V, I
=1V, I
=2V, I
=2V, I
=2V, I
C
C
C
C
E
C
E
E
Test Condition
Test Condition
=0
=0
=0, f=1MHz
=0, f=1MHz (Note 1)
=10mA, f=2GHz
=10mA, f=2GHz
=5mA, f=2GHz
=10mA
200
Min
Min
19
14
⎯
⎯
⎯
⎯
⎯
Typ.
17.0
0.72
Typ.
0.41
0.14
23
⎯
⎯
⎯
MT4S100T
2007-11-01
Max
Max
400
1.0
0.6
0.2
⎯
⎯
1
1
GHz
Unit
Unit
dB
dB
µA
µA
pF
pF
-