IRG4PH40UD2 IRF, IRG4PH40UD2 Datasheet - Page 2

• Manufacturer Part Number: IRG4PH40UD2
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: IRF

Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
E
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
TS
ies
oes
res
g
ge
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
2
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
g
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
—
—
—
—
—
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1440
1410
2850
5360
2100
0.63
1.72
2.15
110
100
280
190
630
130
250
210
180
1.7
-13
3.4
3.3
4.4
5.9
18
18
36
23
27
22
32
13
99
12
50
72
—
—
—
—
—
—
2500
3740
±100
250
130
110
110
200
380
340
2.1
6.0
2.0
3.8
3.7
7.0
8.8
24
53
76
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
A/µs
µA
nA
nC V
nH Measured 5mm froom package
pF
nC
ns
µJ
ns
µJ
ns
V
V
S
V
A
V
V
V
V
V
V
I
I
V
I
V
I
V
T
Energy losses inclued "tail"
I
V
T
I
V
T
Energy losses inclued "tail"
V
V
f = 1.0MHz
T
T
T
T
T
T
T
T
I
I
I
F
F
C
C
C
C
J
J
J
J
J
J
J
J
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
CC
=25°C, V
=125°C, V
=25°C, V
=125°C, V
=25°C, V
=125°C, V
=25°C, V
=125°C, V
= 10A, V
= 10A, V
= 20A
= 20A, V
= 20A, V
= 20A, V
= 25°C
= 25°C
= 150°C
= 20A, V
= 40A, V
= 20A, V
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
Conditions
= 15V
GE
GE
CC
CC
CC
CC
, I
, I
CC
CC
CC
CC
C
C
CC
CC
CC
= 200V, I
= 200V, I
= 200V, I
= 200V, I
GE
GE
GE
GE
GE
C
C
CE
CE
CE
= 200V, I
= 200V, I
= 200V, I
= 200V, I
= 250µA
= 1mA (25°C-150°C)
G
G
G
C
= 250µA
= 250µA
Conditions
= 600V
= 600V
= 600V
= 0V
= 0V, T
= 15V, T
= 15V, T
= 15V, T
= 600V
= 10V, T
= 600V, T
= 10Ω
= 10Ω
= 10Ω, L = 1.0mH
= 20A
F
F
F
F
F
F
F
F
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
= 10A, di/dt = 200A/µs
J
www.irf.com
J
J
J
J
= 150°C
J
= 25°C
= 125°C
= 150°C
= 25°C
= 150°C