IRG4PH40UD2 IRF, IRG4PH40UD2 Datasheet - Page 3

• Manufacturer Part Number: IRG4PH40UD2
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: IRF

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1000
100
10
50
45
40
35
30
25
20
15
10
1
5
0
0.1
0.1
V
CE
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
, Collector-to-Emitter Voltage (V)
T = 25°C
1
J
V
20µs PULSE WIDTH
GE
= 15V
T = 150°C
J
1
f , Frequency ( kHz )
10
A
RMS
1000
100
10
1
4
V
GE
10
, Gate-to-Emitter Voltage (V)
6
T = 150°C
J
T = 25°C
Square wave:
J
8
V
5µs PULSE WIDTH
CC
60% of rated
Ideal diodes
I
= 10V
voltage
10
3
100
12
A