RC28F256 Intel Corporation, RC28F256 Datasheet - Page 21

• Manufacturer Part Number: RC28F256
• Description: Intel StrataFlash Embedded Memory
• Manufacturer: Intel Corporation

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Table 3.
Table 4.
Datasheet
VCCQ
VSS
RFU
DU
NC
A[MAX:0]
DQ[15:0]
ADV#
F1-CE#
F2-CE#
CLK
F1-OE#
F2-OE#
RST#
WAIT
WE#
Symbol
Symbol
TSOP and Easy BGA Signal Descriptions (Sheet 2 of 2)
QUAD+ SCSP Signal Descriptions (Sheet 1 of 2)
Output
Output
Power
Power
Input/
Type
Type
Input
Input
Input
Input
Input
Input
Input
—
—
—
Output Power Supply: Output-driver source voltage.
Ground: Connect to system ground. Do not float any VSS connection.
Reserved for Future Use: Reserved by Intel for future device functionality and enhancement. These
should be treated in the same way as a Do Not Use (DU) signal.
Do Not Use: Do not connect to any other signal, or power supply; must be left floating.
No Connect: No internal connection; can be driven or floated.
ADDRESS INPUTS: Device address inputs. 64-Mbit: A[21:0]; 128-Mbit: A[22:0]; 256-Mbit: A[23:0];
512-Mbit: A[24:0].
See
addressing.
DATA INPUT/OUTPUTS: Inputs data and commands during write cycles; outputs data during
memory, Status Register, Protection Register, and Read Configuration Register reads. Data balls
float when the CE# or OE# are deasserted. Data is internally latched during writes.
ADDRESS VALID: Active low input. During synchronous read operations, addresses are latched on
the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.
In asynchronous mode, the address is latched when ADV# going high or continuously flows through
if ADV# is held low.
WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.
FLASH CHIP ENABLE: Active low input. CE# low selects the associated flash memory die. When
asserted, flash internal control logic, input buffers, decoders, and sense amplifiers are active. When
deasserted, the associated flash die is deselected, power is reduced to standby levels, data and
WAIT outputs are placed in high-Z state.
See
WARNING: All chip enables must be high when device is not in use.
CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode.
During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the
next valid CLK edge with ADV# low, whichever occurs first.
WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.
OUTPUT ENABLE: Active low input. OE# low enables the device’s output data buffers during read
cycles. OE# high places the data outputs and WAIT in High-Z.
F1-OE# and F2-OE# should be tied together for all densities.
RESET: Active low input. RST# resets internal automation and inhibits write operations. This
provides data protection during power transitions. RST# high enables normal operation. Exit from
reset places the device in asynchronous read array mode.
WAIT: Indicates data valid in synchronous array or non-array burst reads. Read Configuration
Register bit 10 (RCR[10], WT) determines its polarity when asserted. WAIT’s active output is V
V
WRITE ENABLE: Active low input. WE# controls writes to the device. Address and data are latched
on the rising edge of WE#.
• In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
• In asynchronous page mode, and all write modes, WAIT is deasserted.
OH
valid data when deasserted.
Table 6 on page
Table 6 on page 22
when CE# and OE# are V
Intel StrataFlash
Order Number: 306666, Revision: 001
22,
for CE# assignment definitions.
Figure 11 on page
®
IL
Embedded Memory (P30)
. WAIT is high-Z if CE# or OE# is V
Name and Function
Name and Function
23, and
Figure 12 on page 23
IH
.
for 512-Mbit and 1-Gbit
1-Gbit P30 Family
April 2005
OL
or
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