CD016G0PFA Advanced Micro Devices, Inc., CD016G0PFA Datasheet - Page 45
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CD016G0PFA
Manufacturer Part Number
CD016G0PFA
Description
16 Megabit(512 K X 32-Bit),CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/write Flash Memory
Manufacturer
Advanced Micro Devices, Inc.
Datasheet
1.CD016G0PFA.pdf
(90 pages)
Command Definitions
March 22, 2004 S29CD016_00A0
Reading Array Data in Non-burst Mode
Reading Array Data in Burst Mode
Writing specific address and data commands or sequences into the command
register initiates device operations. Tables 19-20 define the valid register com-
mand sequences. Writing incorrect address and data values or writing them
in the improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase
Suspend mode. The system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended sectors, the device
outputs status data. After completing a programming operation in the Erase Sus-
pend mode, the system may once again read array data with the same exception.
See
mode.
The system must issue the reset command to re-enable the device for reading
array data if DQ5 goes high, or while in the autoselect mode. See the
gramming of the PPB Lock Bit for a given sector can be verified by writing a PPB
Lock Bit status verify command to the device.
See also
forms
Command
The device is capable of very fast Burst mode read operations. The configuration
register sets the read configuration, burst order, frequency configuration, and
burst length.
Upon power on, the device defaults to the asynchronous mode. In this mode,
CLK, and ADV# are ignored. The device operates like a conventional Flash device.
Data is available t
come asserted. The device enters the burst mode by enabling synchronous burst
reads in the configuration register. The device exits burst mode by disabling syn-
chronous burst reads in the configuration register. (See
The RESET# command will not terminate the Burst mode. System reset (power
on reset) will terminate the Burst mode.
The device has the regular control pins, i.e. Chip Enable (CE#), Write Enable
(WE#), and Output Enable (OE#) to control normal read and write operations.
Moreover, three additional control pins have been added to allow easy interface
with minimal glue logic to a wide range of microprocessors / microcontrollers for
high performance Burst read capability. These additional pins are Address Valid
(ADV#) and Clock (CLK). CE#, OE#, and WE# are asynchronous (relative to
CLK). The Burst mode read operation is a synchronous operation tied to the edge
of the clock. The microprocessor / microcontroller supplies only the initial ad-
dress, all subsequent addresses are automatically generated by the device with
Sector Erase and Program Suspend Command
section for more information. See the
Asynchronous Read Operation (Non-Burst)
sections for more information on this mode.
A d v a n c e
AC Characteristics
ACC
/t
CE
nanoseconds after address becomes stable, CE# be-
I n f o r m a t i o n
S29CD016G
section for timing diagrams.
Sector Erase and Program Resume
section.
in the
for more information on this
Command
Key to Switching Wave-
Definitions).
The pro-
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