STP9547 Stanson Technology Co., Ltd., STP9547 Datasheet - Page 3

• Manufacturer Part Number: STP9547
• Description: P Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )
Parameter
Symbol
V
R
V
I
(BR)DSS
t
t
I
I
DS(on)
GS(th)
V
Q
D(on)
Q
d(on)
d(off)
gfs
Q
GSS
DSS
C
C
C
tr
tf
SD
gd
gs
g
oss
iss
rss
V
V
I
V
V
V
V
V
V
D
V
V
V
GS
DS
I
GS
DS
DS
GS
DS
=-1A,V
DS
DD
S
DS
DS
V
=-2.3A,V
=-15V,V
=-4.5V,I
=0V,ID=-250uA
=-5V,V
=-10V,I
=-15V,I
=0V,V
=-15V,R
DS
=-24V,V
=-24V,V
==-15V,VGS=0V
Condition
I
T
=V
D
R
3
250uA
f=1MHz
J
≡-3.5A
=85℃
G
P Channel Enhancement Mode MOSFET
GEN
=6Ω
GS
GS
GS
,ID=-
D
D
GS
D
=-10V
=±20V
GS
=-5.6A
=-5.6V
L
GS
GS
=-4.5V
=-5.2A
=15Ω
=-10V
=0V
=0V
=0V
-1.0
Min
-40
-10
Copyright © 2007, Stanson Corp.
STP9547
-0.8
Typ
STP9547 2007. Rev.1
47
62
13
680
120
2.3
4.5
16
75
14
16
43
30
±100
Max
-3.0
-1.2
60
80
-1
-5
24
25
26
70
52
-
6.8A
Unit
mΩ
nA
uA
nC
nS
V
V
A
S
V
pF