STP20NM65N STMicroelectronics, STP20NM65N Datasheet - Page 3

• Manufacturer Part Number: STP20NM65N
• Manufacturer: STMicroelectronics

STP20NM65N, STF20NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Symbol
Symbol
dv/dt
I
SD
DM
P
V
R
R
V
V
E
T
I
T
T
I
I
TOT
AS
ISO
thjc
thja
DS
GS
stg
AS
D
D
≤ 15 A, di/dt ≤ 400 A/µs, V
J
J
(2)
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max.
Thermal resistance junction-ambient
max.
Max. lead temperature for soldering
purposes
Drain source voltage
Gate source voltage
Drain current continuous T
Drain current continuous T
Drain current pulsed
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heatsink
(t=1 s; T
Storage temperature
Max. operating junction temperature
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy (starting
T
J
= 25 °C, I
C
= 25 °C)
D
DS peak
= I
Parameters
Parameters
Parameter
AR
Doc ID 13845 Rev 2
, V
C
≤ V
=25 °C
DD
(BR)DSS
= 50 V)
C
C
=100 °C
=25 °C
, V
DD
= 80 % V
(BR)DSS
TO-220
TO-220
125
15
.
1
-55 to 150
Value
Value
Value
62.50
± 25
9.45
115
300
650
150
15
60
4
TO-220FP
TO-220FP
4.17
2500
15
30
Electrical ratings
(1)
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
W
°C
A
V
V
A
A
A
V
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