STP20NM65N STMicroelectronics, STP20NM65N Datasheet - Page 4

• Manufacturer Part Number: STP20NM65N
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1. C
Table 7.
C
V
Symbol
Symbol
Symbol
R
V
C
oss eq
(BR)DSS
t
t
l
C
l
DS(on)
C
increases from 0 to 80 % V
GS(th)
C
Q
Q
d(on)
d(off)
DSS
GSS
R
Q
= 25 °C unless otherwise specified).
oss
oss eq
t
t
iss
rss
gs
gd
G
r
f
g
(1)
: defined as a constant equivalent capacitance giving the same charging time as C
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
On/off states
DS
Dynamic
Switching times
=0)
Parameter
Parameter
Parameter
GS
=0)
DSS
.
Doc ID 13845 Rev 2
V
R
V
(see
(see
I
V
V
V
I
V
I
V
V
f = 1MHz open drain
V
V
(see
D
D
D
GS
GS
GS =
DD
DS
DS
DS
DS
DD
GS
g
=7.5 A, V
= 250 µA,
=4.7 Ω,
= 1 mA, V
=10 V
= ±25 V, V
= 325 V, I
= 50 V, f = 1MHz, V
= 0 to V
= 10 V
= max rating
= max rating @ 125 °C
= 520 V, I
Figure
Figure
Figure
V
Test conditions
Test conditions
Test conditions
DS
GS
15)
20)
16)
GS
GS
=10 V
D
D
DS
=7.5 A
= 0
= 0
= 15 A,
=0
GS
= 0
STP20NM65N, STF20NM65N
Min.
Min.
Min.
650
2
-
-
-
-
-
-
Typ.
13.5
0.250 0.270
1280
Typ.
Typ.
15
75
21
110
260
4.8
10
44
22
3
8
oss
when V
Max.
Max.
Max.
100
100
-
-
1
4
-
-
-
-
DS
Unit
Unit
Unit
ns
ns
ns
ns
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω