HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 18

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.3 / Aug. 2005
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Valid Block Number
T
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
T
Vcc
IO
BIAS
T
STG
A
(2)
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 8: Absolute maximum ratings
Table 7: Valid Blocks Number
Parameter
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
2008
Min
Typ
HY27UF(08/16)2G2M Series
Max
2048
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-25 to 85
-40 to 85
0 to 70
Value
3.3V
Preliminary
Blocks
Unit
Unit
℃
℃
℃
℃
℃
V
V
18