HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 9

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.3 / Aug. 2005
NOTE:
1. L must be set to Low.
NOTE:
1. L must be set to Low.
READ 1
READ FOR COPY-BACK
READ ID
RESET
PAGE PROGRAM (start)
COPY BACK PGM (start)
CACHE PROGRAM
BLOCK ERASE
READ STATUS REGISTER
RANDOM DATA INPUT
RANDOM DATA OUTPUT
CACHE READ START
CACHE READ EXIT
LOCK BLOCK
LOCK TIGHT
UNLOCK (start area)
UNLOCK (end area)
READ LOCK STATUS
2nd Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
3rd Cycle
4th Cycle
5th Cycle
1st Cycle
1st Cycle
FUNCTION
IO0
A11
A19
A27
IO0
A0
A8
A12
A20
A28
A0
A8
Table 4: Address Cycle Map(x16)
Table 3: Address Cycle Map(x8)
1st CYCLE
IO1
A12
A20
L
A1
A9
(1)
IO1
A13
A21
L
A1
A9
00h
00h
90h
80h
85h
80h
60h
70h
85h
05h
00h
34h
2Ah
2Ch
23h
24h
7Ah
FFh
(1)
Table 5: Command Set
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
IO2
A10
A13
A21
L
A2
(1)
IO2
A10
A14
A22
L
A2
(1)
2nd CYCLE
IO3
A14
A22
L
L
A3
(1)
(1)
D0h
30h
35h
10h
10h
15h
E0h
31h
-
-
-
-
-
-
-
-
-
-
IO3
A11
A15
A23
L
A3
(1)
IO4
A15
A23
L
L
A4
(1)
(1)
HY27UF(08/16)2G2M Series
IO4
3rd CYCLE
A16
A24
L
L
A4
(1)
(1)
IO5
A16
A24
L
L
A5
(1)
(1)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IO5
A17
A25
L
L
A5
IO6
A17
A25
(1)
(1)
L
L
A6
(1)
(1)
Acceptable command
during busy
IO7
A18
A26
IO6
L
L
A18
A26
A7
L
L
A6
(1)
(1)
(1)
(1)
Preliminary
Yes
Yes
IO8-IO15
IO7
A19
A27
L
L
L
L
L
L
L
A7
(1)
(1)
(1)
(1)
(1)
(1)
(1)
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