HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 20

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.3 / Aug. 2005
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB#)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 9: DC and Operating Characteristics
Symbol
(RB#)
I
I
I
I
I
V
V
V
I
V
I
I
CC1
CC2
CC3
CC4
CC5
LO
OL
OH
LI
OL
IH
IL
Table 10: AC Conditions
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
V
V
PRE=WP#=0V/Vcc
PRE=WP#=0V/Vcc
OUT
Test Conditions
IN=
CE#=Vcc-0.2,
I
I
=0 to Vcc (max)
I
I
I
0 to Vcc (max)
OH
OH
CE#=V
V
V
CE#=V
t
OL
OL
OUT
RC
OL
OL
=-100uA
=-400uA
=100uA
=2.1mA
=50ns
=0.2V
=0.4V
=0mA
-
-
-
-
IH
IL
,
,
HY27UF(08/16)2G2M Series
1 TTL GATE and CL=100pF
0.8xVcc
1 TTL GATE and CL=50pF
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
-
-
-
0V to Vcc
3.3Volt
Value
3.3Volt
Vcc/2
5ns
Typ
15
15
15
10
10
-
-
-
-
-
-
-
-
-
Vcc+0.3
Preliminary
0.2xVcc
Max
± 10
± 10
0.4
30
30
30
50
1
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V
V
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