MT28C3224P20 Micron Technology, MT28C3224P20 Datasheet - Page 26

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MT28C3224P20

Manufacturer Part Number
MT28C3224P20
Description
FLASH AND SRAM COMBO MEMORY
Manufacturer
Micron Technology
Datasheet
COMBINED DC CHARACTERISTICS
NOTE: 1. All currents are in RMS unless otherwise noted.
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3224P20_3.p65 – Rev. 3, Pub. 7/02
DESCRIPTION
Input Low Voltage
Input High Voltage
Output Low Voltage
I
Output Low Voltage
I
Output High Voltage
I
Output High Voltage
I
V
V
Operations
V
Input Leakage Current
Output Leakage Current
V
Asynchronous Random Read
Asynchronous Page Read
F_V
F_V
F_V
F_V
Erase Suspend Current
F_V
Program Suspend Current
Read-While-Write Current
OL
OL
OH
OH
PP
PP
CC
CC
100ns cycle
100ns/35ns cycle
= 100µA (Flash)
= 100µA (SRAM)
= -100µA (Flash)
= -100µA (SRAM)
CC
CC
CC
CC
CC
Lockout Voltage
Program/Erase Lock Voltage
Read Current
During PROGRAM/ERASE
Erase Current
plus S_V
plus S_V
plus S_V
Program Current
2. V
3. 12V V
4. APS mode reduces I
5. Test conditions: Vcc = V
6. I
7. Operating current is a linear function of operating frequency and voltage. Operating current can be calculated using
add a current draw of I
the formula shown with operating frequency (f) expressed in MHz and operating voltage (V) in volts.
Example: When operating at 2 MHz at 2V, the device will draw a typical active current of 0.8*2*2 = 3.2mA in the page
access mode. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add
current required to drive output capacitance expected in the actual system.
CC 6
IL
may decrease to -0.4V and V
and I
PP
CC
CC
CC
is supported for a maximum of 100 cycles and may be connected for up to 10 cumulative hours.
CC 7
Standby Current
values are valid when the device is deselected. Any READ operation performed while in suspend mode will
CC
to approximately I
CC 1
CC
(MAX), CE# = V
or I
CC 2
IH
.
CONDITIONS
may increase to V
(continued on next page)
1
CC 3
IL
, OE# = V
levels.
CC
IH
26
256K x 16 SRAM COMBO MEMORY
. All other inputs = V
Q + 0.3V for durations not to exceed 20ns.
SYMBOL
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
I
PPLK
CC
CC
CC
CC
CC
CC
CC
CC
LKO
I
OZ
PP
PP
OH
OH
OL
OL
IH
L
IL
1
2
3
4
5
6
7
8
1
2
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
MIN
11.4
CC
CC
CC
CC
0.1
0.3
0.9
0.4
0
1
/V
2 MEG x 16 PAGE FLASH
Q -
Q -
Q -
IH
CC
or V
Q = 1.70V–1.90V
or 1.80V–2.20V
IL
TYP
.
25
18
6
6
MAX
V
0.10
12.6
0.4
0.3
0.4
2.2
15
60
55
45
60
60
80
CC
1
1
5
Q
UNITS NOTES
©2002, Micron Technology, Inc.
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
ADVANCE
4, 5
4, 5
2
2
3
6
6

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