MT58L256L36D Micron Semiconductor, MT58L256L36D Datasheet - Page 15

• Manufacturer Part Number: MT58L256L36D
• Description: (MT58Lxxxx) 8Mb SYNCBURST SRAM
• Manufacturer: Micron Semiconductor

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
-0.5V to +4.6V
Voltage on V
-0.5V to +4.6V
V
V
Storage Temperature (plastic) ....................... -55°C to +150°C
Storage Temperature (FBGA) ....................... -55°C to +125°C
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
TQFP CAPACITANCE
NOTE: 1. All voltages referenced to V
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L512L18D_D.p65 – Rev. 2/02
........................................................................... Relative to V
........................................................................... Relative to V
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
IN
IN
(DQx) ............................................ -0.5V to V
(inputs) ............................................ -0.5V to V
T
2. Overshoot:
3. MODE has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
6. This parameter is sampled.
A
Undershoot: V
Power-up:
curves are available upon request.
DD
DD
DD
+70°C; V
Q should never exceed V
Q Supply
Supply
DD
V
V
, V
IH
IL
IH
DD
-0.7V for t
+4.6V for t
+3.6V and V
OH
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2. AC load current is higher than the stated DC values. AC I/O
SS
DD
(GND).
. V
T
t
DD
Output(s) disabled,
A
KC/2 for I
t
DD
KC/2 for I
= 25°C; f = 1 MHz;
0V
0V
CONDITIONS
CONDITIONS
I
and V
3.135V for t
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
OH
I
V
OL
DD
DD
= -4.0mA
DD
= 8.0mA
Q + 0.5V
V
V
= 3.3V
DD
IN
IN
+ 0.5V
Q can be connected together.
20mA
20mA
V
V
SS
SS
DD
DD
200ms
15
Junction Temperature** ............................................... +150°C
Short Circuit Output Current ........................................ 100mA
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow. See
Micron Technical Note TN-05-14 for more information.
SYMBOL
SYMBOL
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
C
V
V
C
V
C
V
IL
V
C
DD
IL
CK
OH
DD
O
A
OL
IH
I
IL
O
I
Q
3.135
3.135
TYP
MIN
-0.3
-1.0
-1.0
2.4
2.0
3
4
3
3
–
V
MAX
DD
MAX
3.5
3.5
0.8
1.0
1.0
0.4
3.6
3.6
4
5
–
+ 0.3
UNITS
UNITS
µA
µA
pF
pF
pF
pF
©2002, Micron Technology, Inc.
V
V
V
V
V
V
NOTES
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
6
6
6
6
3
1