GT25Q301 Toshiba Semiconductor, GT25Q301 Datasheet
GT25Q301
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GT25Q301 Summary of contents
Page 1
... Equivalent Circuit Collector Gate Emitter GT25Q301 = 2.7 V (max) Symbol Rating Unit V 1200 V CES V ±20 V GES 200 150 ° −55 to 150 °C stg 1 GT25Q301 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 2003-01-28 ...
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... di/dt = −200 A/µ ― th (j-c) R ― th ( (off) 2 GT25Q301 Min Typ. ― ― ±500 = 0 ― ― 4.0 ― ― 2.1 ― 1360 ― 0.10 ― 0.30 ― 0.16 (Note) ― 0.68 ― ― ― ― ― ― ...
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... Common emitter Tc = 125° Gate-emitter voltage Common emitter −60 −20 Case temperature Tc (°C) 3 GT25Q301 V – ( – (V) GE – (sat) ...
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... Switching Loss off 0.3 0.1 0 300 500 5 4 GT25Q301 Switching Time – Common emitter 600 ± Ω 25° 125° Collector current I (A) ...
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... T j ≤ 125°C 0 ± Ω 0.1 1000 3000 1 3 (V) 5 GT25Q301 – 400 600 200 120 160 200 Gate charge Q (nC – ...
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... Tc = 25° Diode stage 0 10 IGBT stage −1 10 −2 10 −3 10 −4 10 −5 −4 −3 −2 − Pulse width t ( GT25Q301 2003-01-28 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 GT25Q301 000707EAA 2003-01-28 ...